Nichia 488nm Sasser long pushed semiconductor lasers
Nichia has developed a continuous oscillation center wavelength of 488nm blue-green semiconductor laser components, in March 2008 began to supply samples. The product line using the GaN semiconductor laser devices have been put into the species, the maximum emission wavelength.
The product for replacement in areas of biotechnology research and development in the use of Ar (Ar +) laser. In the field, Ar laser as excitation source of fluorescence analysis, which uses the laser with a fluorescent material DNA, quantitative analysis of light-emitting materials. According to Nichia introduced, Ar laser energy conversion efficiency of only a few percent, so large heating and cooling system is high, has been eager to reduce the size of laser devices. The publication of the blue-green semiconductor laser energy conversion efficiency will be increased to 13%, enabling the miniaturization of laser devices. In addition, Nichia also mentioned the development of components in comparison with the Ar laser for high-speed modulation characteristics. In is held at the United States Shengnuo Se "PhotonicsWest", the company began on January 22 at its booth on the show the product.
Has begun sample shipments of a variety of output power in continuous oscillation is 5mW. At this point the drive current of 71mA, a driving voltage of 5.3V. Continuous oscillation, the blue-green semiconductor laser threshold current of 49mA, a threshold voltage of 5.0V. Continuous oscillation, when the output power of 5mW, confirmed at +25 for 1000 hours under a steady job. Projected life expectancy more than 10,000 hours (1.3 times the initial current value to the time). The first model only 5mW, 20mW model "is not impossible" (Nichia Chemical Industries), is currently doing pre-production development. Although no details, but the model is likely to 20mW, compared with 5mW model, changing the input current when the light output power characteristics.
Order to achieve the center wavelength of 488nm, improved light-emitting layer of the In ratio. However, due to differences in lattice constant, In raising the percentage of the more crystalline defects in the translocation of the more, the results will lead to lower quality crystal is difficult to light. This, optimization of the crystal growth, not increased too much density can be shifted to improve the ratio of In. In addition, in order to generate light in the crystallization process can not easily be absorbed in the emitting layer of the layer structure has also made improvements.
This, Nichia Chemical Industries and existing products as the polarity of the bottom surface of GaN light-emitting device structure formed. GaN systems currently in the field of semiconductor laser devices, designed to achieve large wavelength of the green semiconductor laser research has become a hot spot. In a large wavelength, the general is to increase the proportion of light-emitting layer of In, but as mentioned above, crystalline defects will be increased, but also because the piezoelectric effect of the enhanced electric field caused by luminescence efficiency decreased. Recently, in order to reduce the piezoelectric field in the bottom of the non-polar GaN surface structure of the formation of light emitting devices has begun. Nichia Chemical Industries, not only in non-polar surface, is also committed to large-wavelength surface in polar research.
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