Prospect of switching power supply at home and abroad – switches, power supplies
First, strong market demand, always Switch Power | important engine of growth regulator
Switching power supply technology is a power electronics technology, the use of power converters for power conversion, electrical energy through the transformation to meet various power requirements. Because of its high efficiency can bring significant economic benefits, which attracted all the attention and rapid promotion.
To AC-DC transformation, for example, the traditional use of frequency power conversion technology, compared with control, using high-power high-frequency switch rectifier power supply is a leap forward in technology, it not only can easily be different voltage levels, more importantly, get rid of the large and bulky frequency Transformer And filter inductance capacitor. As a result of high frequency power conversion, power supply units to significantly reduce the size and weight, which may host size and equipment coordination, and to further improve the electrical properties. That is why in 1994 the former Ministry of Posts and China make major decisions require communication to promote the use phased switching power supply to replace the power supply. Years of practice has proved that this decision is entirely correct. The use of switching power supply for the country save a lot of copper, steel and covers. As the transformation efficiency, reduce energy consumption and reduce the power room-temperature environment, improve the environment for staff. China's postal and telecommunications sector widely used switching power supply has greatly promoted its wide application in other fields. It is worth noting that the last two years there's power system DC operating power, is investing 400 billion yuan for the state for urban and rural power grid reconstruction of power supply projects, power transmission and distribution power to improve the quality of introduction, it has begun switching power supply to replace the traditional use of phased power. Some domestic communications companies such as ZTE have also launched products.
Present, and internal switching power supply manufacturers have independently developed more than 300, the scale of a dozen. China-made switching power supply has occupied a considerable market, large companies such as ZTE's power products developed have been widely recognized in the power market competition to compete, and a small amount of start exporting.
II Switching Power Supply 21 Prospect
Energy plays a key role of social modernization. Power electronic power conversion technology for its flexible approach, high performance, high power density, high efficiency, in the 21st century will be to develop, and switching power supply is a power electronic technology account for a large share of an important aspect.
1. Semiconductors and circuit switching power supply device is an important support for the development of
Power semiconductor devices power electronics technology is still the "leading", the progress of power electronics has introduced a new must rely on power electronic devices.
Power FET (MOSFET) as conductive unipolar more children significantly reduces the switching time, which can be easily achieved 1MHz switching frequency and the spotlight. However MOSFET, the device blocking voltage must be widened to improve the device drift region, resulting in the device resistance increases rapidly, the device-state pressure drop increased on-state losses increase, we can only apply to small power products. In order to reduce on-state resistance, the U.S. company uses to improve IR unit area method of the original cell number. Developed as an IR HEXFET MOSFET, the trench (Trench) of the original cell density has reached 112 million per square inch of the world's highest level of on-state resistance R up 3m . Power MOSFET, 500V, TO220 package HEXFET since 1996, its on-state resistance of 50% per year rate of decline. IR has also developed a low gate charge (Qg) of the HEXFET, faster switching, taking into account the on-state resistance and gate charge reduces both, the R × Qg for decreased rate of 30% per year. Schottky diodes for the development, the recent use of Trench structure, is expected to show a smaller drop Schottky diodes, called TMBS-trench MOS barrier Schottky, which may in very low supply voltage applications and synchronization Rectifier MOSFET competition.
Silicon material for semiconductor devices "rule" of semiconductor devices has been more than 50 years, to further tap the potential of silicon performance is difficult. The semiconductor materials from the 70's, 80 to 90 years in particular, since the gallium arsenide (GaAs), semiconductor diamond, silicon carbide (SiC) of the study has a. 90 years into the future, the research on silicon carbide to the hot spot. Experiments show that using SiC semiconductor device whose resistance Si devices only 1 / 200; such as high-voltage silicon power MOSFET, conduction voltage drop up to 3 ~ 4V, while the SiC power MOSFET, conduction voltage drop is less than 1V , and turn-off time is less than 10ns. Experiments show that the voltage up to 300V of the SiC Schottky diode (the other electrode of gold, palladium, titanium, cobalt may be), the reverse leakage current of less than 0.1mA/mm, while the reverse recovery time is almost zero.
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